PART |
Description |
Maker |
M2V64S20BTP M2V64S20BTP-10 M2V64S20BTP-10L M2V64S2 |
64M bit Synchronous DRAM 4-BANK x 2097152-WORD x 8-BIT 4-BANK x 1048576-WORD x 16-BIT 4-BANK x 4194304-WORD x 4-BIT From old datasheet system
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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M5M5V208FP-10LL-W M5M5V208FP-10L-W M5M5V208FP-12LL |
From old datasheet system Coaxial Cable; Coaxial RG/U Type:8; Impedance:50ohm; Conductor Size AWG:16; No. Strands x Strand Size:19 x 29; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位(262144 - Word8位)的CMOS静态RAM 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位(262144 - Word位)的CMOS静RAM 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位(262144 - Word位)的CMOS静态RAM
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http:// MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
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IBM13M64734BCA |
64M x 72 1 Bank Registered/Buffered SDRAM Module(64M x 72 1组寄缓冲同步动态RAM模块)
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IBM Microeletronics
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MSM56V16160D MSM56V16160DH |
2-Bank 512K×16 Synchronous Dynamic RAM(212K×16动态RAM) 2-Bank x 524288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM
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OKI electronic componets OKI SEMICONDUCTOR CO., LTD.
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UPD23C64300F9-XXX-BC3 UPD23C64300 UPD23C64300F9-BC |
64M-BIT MASK-PROGRAMMABLE ROM 8M-WORD BY 8-BIT (BYTE MODE) / 4M-WORD BY 16-BIT (WORD MODE) 6400位掩膜可编程ROM00万字位(字节模式 4分字6位(字模式) CAP 3.6PF 16V /-0.1PF THIN-FILM SN90/PB10/NI 30PPM TR-7-PA
|
NEC, Corp. NEC Corp. NEC[NEC]
|
UPD4564841G5 UPD4564441 UPD4564163 UPD4564163G5 UP |
64M-bit Synchronous DRAM 4-bank, LVTTL
|
ELPIDA[Elpida Memory]
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MSM56V16800D MSM56V16800DH |
2-Bank?1,048,576-Word?8-Bit Synchronous Dynamic RAM(2缁??,048,576瀛??浣??姝ュ???AM) 2-Bank×1,048,576-Word×8-Bit Synchronous Dynamic RAM(2组,048,576字位同步动态RAM) 2-Bank x 1048576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM
|
OKI SEMICONDUCTOR CO., LTD. OKI electronic componets
|
K8D6316UBM-YI07 K8D6316UBM-YI08 K8D6316UBM-YI09 K8 |
64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K8D6316UBM-LC09 K8D638UBM-FC09 K8D6316UBM-LC08 K8D |
64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
|
http://
|
K8D6316UBM |
(K8D6x16UxM) 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
|
Samsung semiconductor
|
MR26V51253L |
32M.Word × 16.Bit or 64M.Word × 8.Bit Page Mode P2ROM
|
List of Unclassifed Man...
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UPD23C64380F9-XXX-BC3 UPD23C64340 UPD23C64340F9-BC |
64M-BIT MASK-PROGRAMMABLE ROM 8M-WORD BY 8-BIT (BYTE MODE) / 4M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE
|
NEC[NEC]
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